Invented by Chang Sung Sean Kim, Jong Pa HONG, Joong El Ghim, Samsung Electronics Co Ltd

Chemical vapor deposition (CVD) apparatus is a crucial tool in various industries, including semiconductor manufacturing, aerospace, automotive, and medical. This technology has revolutionized the production of thin films and coatings, enabling the development of advanced materials with unique properties. The market for CVD apparatus has been experiencing significant growth in recent years, and this trend is expected to continue in the coming years. According to a report by Market Research Future, the global CVD apparatus market is projected to reach a value of $2.9 billion by 2023, growing at a CAGR of 7.2% during the forecast period. One of the key factors driving the market growth is the increasing demand for high-performance materials in various industries. CVD apparatus allows the deposition of thin films with exceptional properties, such as high thermal conductivity, electrical conductivity, corrosion resistance, and wear resistance. These properties make CVD-coated materials ideal for applications in electronics, aerospace, and automotive sectors. The semiconductor industry is one of the major contributors to the growth of the CVD apparatus market. With the continuous advancements in microelectronics, there is a growing need for thin films with precise thickness and uniformity. CVD apparatus offers a highly controlled deposition process, enabling the production of thin films with excellent quality and consistency. Moreover, the increasing demand for miniaturized electronic devices, such as smartphones and wearables, further drives the market growth. Another significant factor propelling the market is the rising adoption of CVD apparatus in the medical industry. CVD-coated materials are widely used in medical implants and devices due to their biocompatibility and wear resistance. These coatings enhance the performance and longevity of medical devices, leading to improved patient outcomes. Additionally, the growing investments in healthcare infrastructure and the rising prevalence of chronic diseases are expected to fuel the demand for CVD apparatus in the medical sector. Furthermore, the market is witnessing technological advancements in CVD apparatus, leading to improved efficiency and cost-effectiveness. Manufacturers are focusing on developing innovative deposition techniques, such as atomic layer deposition (ALD) and plasma-enhanced CVD (PECVD), to meet the evolving industry requirements. These advancements are expected to drive the adoption of CVD apparatus in new applications and expand the market further. However, the high initial cost of CVD apparatus and the complexity associated with its operation and maintenance are some of the challenges faced by market players. Additionally, environmental concerns related to the use of certain precursor chemicals in the CVD process may hinder the market growth to some extent. Nevertheless, ongoing research and development activities aimed at addressing these challenges are expected to create lucrative opportunities for the market in the future. In conclusion, the market for CVD apparatus is witnessing significant growth due to the increasing demand for high-performance materials in various industries. The semiconductor industry, in particular, is a major driver of the market, with the need for precise and uniform thin films. The medical sector is also contributing to the market growth, driven by the demand for biocompatible and wear-resistant coatings. Technological advancements and ongoing research activities are expected to further propel the market, despite the challenges faced. Overall, the future looks promising for the CVD apparatus market, with ample opportunities for innovation and expansion.

The Samsung Electronics Co Ltd invention works as follows

The invention provides a chemical vapor-deposition apparatus that includes a reaction room, a susceptor mounted in the chamber, and a rotating unit for rotating the susceptor. It also provides a gas intake in the chamber that introduces reaction gases from outside the chamber, a gas discharge in the chamber that discharges the finished reaction gas from inside the chamber in the direction of rotation of the susceptor, and a variable-flow-adjustment unit between the gas inlet, and gas outlet.

Background for Chemical vapor deposition apparatus

1. “1.

The present invention is a chemical vapor evaporation apparatus that includes a variable-flow adjusting device which distributes the reaction gas uniformly into a reaction room.

2. “2.

In general, CVD is used to grow various crystal films on different substrates.

The growth rate of crystals is low compared to LPE.

To overcome this problem, it is common to use a method of growth in which multiple substrates are grown simultaneously in one cycle.

However when films are grown simultaneously on multiple substrates, it is important to maintain the temperature and reaction gas flow of each substrate in order for the films on those substrates to be the same quality.

To achieve this construction, different methods were used. In the first method, gas is constantly maintained on the substrates by using several injection pipes. In a secondary method, several substrates can be arranged in a circular shape around a rotation axis. They are then rotated along the same axis. In a third technique, multiple substrates can be rotated independently of each other. These methods can be used separately or in combination.

The uniform flow of reaction gas can’t be achieved in the case of a method where several substrates are arranged along one rotation axis. Reaction gas is introduced from outside the reaction chamber into the interior of the chamber, perpendicularly to the rotation axis. It is therefore difficult to grow high-quality thin films on a wafer.

The present invention has the advantage that it includes a gas-flow-adjusting unit that uniformly distributes the reaction gas introduced into an reaction chamber. This results in a thin film of high quality.

The description will include additional aspects and benefits of the general inventive idea. Some of these will be evident from the description or can be learned through the practice of this general inventive idea.

According to one aspect of the invention a chemical vapour deposition apparatus includes a reaction room; a susceptor mounted in the chamber with a plurality wafers; a rotating unit that rotates susceptor, a gas intake that is located in the chamber that introduces gas from outside the chamber into the chamber; and a gas discharge that is situated in the chamber that discharges the finished reaction gas from inside the chamber in the direction of rotation of susceptor.

The chemical vapor deposition device may also include a heating unit located on one side of the susceptor to radiate heat onto the susceptor.

The gas jetting plate unit is preferably superimposed from the outside the reaction chamber towards the center.

The gas jetting plates that make up the variable gas flow adjusting unit can be shaped in a ring.

The variable gas-flow adjustment unit can adjust the reaction gas flow based on the area of overlap between the holes that occur when a gas jetting plate or a plurality of gas jetting plates is rotated.

The holes in the gas jetting plates that make up the variable gas flow adjusting unit can be inclined in an eccentric direction with respect to the center of rotation for the susceptor.

The inclination of the holes in the gas jetting plates can be changed to change the direction of the gas reaction jetted by the variable gas-flow adjustment unit.

The direction eccentric to the center of rotation of the susceptor can be reversed to the direction of rotation of the susceptor.

The holes in the gas jetting plates that make up the variable gas flow adjusting unit can be circular, elliptical or polygonal shaped.

The holes in the gas jetting plates that make up the variable gas flow adjusting unit can have a slit-shaped opening which extends either in a vertical or horizontal direction.

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